PART |
Description |
Maker |
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
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BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
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TFF11145HN BLP7G10S-140 BLP7G10S-140G BLS7G3135LS- |
LDMOS S-Band radar power transistor Low phase noise LO generator TFF11126HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140G<SOT1204 (HSOP4)|<<http://www.nxp.com/packages/SOT1204.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140<SOT1138 (HSOP4F)|<<http://www.nxp.com/packages/SOT1138.html<1<Always Pb-free,; SiGe:C Low Noise High Linearity Amplifier
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NXP Semiconductors N.V.
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
BLF7G27L-140 |
Power LDMOS transistor
|
Philips Semiconductors
|
BLF8G20LS-140GV |
Power LDMOS transistor
|
NXP Semiconductors
|
MRFE6VS25N MRFE6VS25NR1 |
RF Power LDMOS Transistor
|
Freescale Semiconductor, Inc
|
BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF7G22L-100P |
Power LDMOS transistor
|
NXP Semiconductors
|
BLA6G1011-200R |
Power LDMOS transistor
|
NXP Semiconductors
|